Some Ion-Bombardment Effects on Copper-Gold Alloys
| dc.contributor.advisor | Thompson, D.A. | |
| dc.contributor.advisor | Carter, G. | |
| dc.contributor.author | Newcombe, Richard G. | |
| dc.contributor.department | Engineering Physics | en_US |
| dc.date.accessioned | 2016-07-21T14:42:47Z | |
| dc.date.available | 2016-07-21T14:42:47Z | |
| dc.date.issued | 1980-08 | |
| dc.description | Title: Some Ion-Bombardment Effects on Copper-Gold Alloys, Author: Richard G. Newcombe, Location: Thode | en_US |
| dc.description.abstract | <p>This report discusses some of the effects of medium-energy ion-bombardment on various copper-gold alloys. Thin (20nm-150nm) films of copper-gold alloys, on Si or SiO2 substrates, were bombarded with 30keV Ar+, 45keV Ar+, or 45 keV Bi+ ions, to fluences of up to 8 x 10^14 ions/mm2. One of the targets was held at ~50°K; the others were irradiated at room temperature. The effects were observed by 1.00 and 2.00 MeV He+ ion Rutherford backscattering. The results are discussed in terms of preferential sputtering, gas trapping, and surface topography.</p> | en_US |
| dc.description.degree | Master of Engineering (ME) | en_US |
| dc.description.degreetype | Thesis | en_US |
| dc.identifier.uri | http://hdl.handle.net/11375/19876 | |
| dc.language.iso | en | en_US |
| dc.title | Some Ion-Bombardment Effects on Copper-Gold Alloys | en_US |
| dc.type | Thesis | en_US |
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