Some Ion-Bombardment Effects on Copper-Gold Alloys

Abstract

<p>This report discusses some of the effects of medium-energy ion-bombardment on various copper-gold alloys. Thin (20nm-150nm) films of copper-gold alloys, on Si or SiO2 substrates, were bombarded with 30keV Ar+, 45keV Ar+, or 45 keV Bi+ ions, to fluences of up to 8 x 10^14 ions/mm2. One of the targets was held at ~50°K; the others were irradiated at room temperature. The effects were observed by 1.00 and 2.00 MeV He+ ion Rutherford backscattering. The results are discussed in terms of preferential sputtering, gas trapping, and surface topography.</p>