Irradiation and Annealing Behaviour of Heavy Ion Implanted Silicon by TEM and the Channeling Backscattering Technique (Part B)

Abstract

Recent channeling-backscattering measurements of the disorder induced by heavy ion irradiation of semiconductors has indicated radiation damage far in excess of that predicted by linear transport theory. The present work extends the investigation to TEM and compares the two techniques in an annealing study of ion irradiated silicon (~ 80-200 a.m.u. ions of 15-100 keV) for low fluence (typically 3×10¹¹/cm² for TEM and 10¹²-10¹³/cm² for channeling) bombardment. In addition to showing a good correlation between the techniques, the results indicate that neither does there exist a unique relationship between lattice disordering and cascade energy density, nor that a well defined amorphous structure seems to exist.