Study of III-V Semiconductors by Spatially-resolved and Polarization-resolved Photoluminescence

Abstract

<p>Spatially-resolved and polarization resolved photoluminescence has been used to study the photoelastic effect and the correlation between strain fields on the facet and along the active region in semiconductor diode lasers. The spectral mapping ability of this technique has been developed and has been demonstrated to be a useful tool for the study of quantum well intermixing processes in InGaAsP systems.</p>