Characterization of quantum wells using degree of polarization of photoluminescence

Abstract

<p>The state of polarization of photoluminescence that is emitted along (001) and (110) crystallographic orientations has been studied to obtain quantitative information on the interfacial strain, thickness and biaxial strain in InP/InGaAs(P)/InP quantum wells. It is demonstrated that the edge emission from quantum wells is a sensitive function of the strain and thickness of the quantum well. The anisotropic polarization of photoluminescence that is emitted normal to the plane of the quantum well provides information regarding the interfacial features. This anisotropy has been correlated to the anisotropic strain field that is associated with the strained bonds at the interfaces of the quantum wells.</p>