Please use this identifier to cite or link to this item:
http://hdl.handle.net/11375/8771
Title: | Spectral Properties of 1.3 μm InGaAsP Semiconductor Diode Lasers |
Authors: | Hayward, Edward Joseph |
Advisor: | Cassidy, D.T. |
Department: | Engineering Physics |
Keywords: | Engineering Physics;Engineering Physics |
Publication Date: | Apr-1993 |
Abstract: | <p>Physical mechanisms responsible for the above-threshold spectral output of 1.3 μm InGaAsP semiconductor diode lasers are presented and discussed. Measurements<br />of the facet emission of a large number of devices indicate modulations in the below-threshold<br />RmGm product which can be used to predict and explain the shape of the above-threshold mode profile for output power levels of less than approximately 5 mW. Above-threshold<br />measurements using devices incorporated into a shon-external-cavity<br />configuration show that a symmetric, nonlinear gain mechanism is required to explain the<br />spectral properties for output power levels in a single mode which are greater that 5 mW. Thus it is concluded that both the effects of scattering centres and nonlinear gain are required to model accurately the spectral output of 1.3 μm InGaAsP semiconductor diode lasers.</p> |
URI: | http://hdl.handle.net/11375/8771 |
Identifier: | opendissertations/3948 4965 1858770 |
Appears in Collections: | Open Access Dissertations and Theses |
Files in This Item:
File | Size | Format | |
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fulltext.pdf | 2.9 MB | Adobe PDF | View/Open |
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