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http://hdl.handle.net/11375/8771
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DC Field | Value | Language |
---|---|---|
dc.contributor.advisor | Cassidy, D.T. | en_US |
dc.contributor.author | Hayward, Edward Joseph | en_US |
dc.date.accessioned | 2014-06-18T16:43:55Z | - |
dc.date.available | 2014-06-18T16:43:55Z | - |
dc.date.created | 2011-03-08 | en_US |
dc.date.issued | 1993-04 | en_US |
dc.identifier.other | opendissertations/3948 | en_US |
dc.identifier.other | 4965 | en_US |
dc.identifier.other | 1858770 | en_US |
dc.identifier.uri | http://hdl.handle.net/11375/8771 | - |
dc.description.abstract | <p>Physical mechanisms responsible for the above-threshold spectral output of 1.3 μm InGaAsP semiconductor diode lasers are presented and discussed. Measurements<br />of the facet emission of a large number of devices indicate modulations in the below-threshold<br />RmGm product which can be used to predict and explain the shape of the above-threshold mode profile for output power levels of less than approximately 5 mW. Above-threshold<br />measurements using devices incorporated into a shon-external-cavity<br />configuration show that a symmetric, nonlinear gain mechanism is required to explain the<br />spectral properties for output power levels in a single mode which are greater that 5 mW. Thus it is concluded that both the effects of scattering centres and nonlinear gain are required to model accurately the spectral output of 1.3 μm InGaAsP semiconductor diode lasers.</p> | en_US |
dc.subject | Engineering Physics | en_US |
dc.subject | Engineering Physics | en_US |
dc.title | Spectral Properties of 1.3 μm InGaAsP Semiconductor Diode Lasers | en_US |
dc.type | thesis | en_US |
dc.contributor.department | Engineering Physics | en_US |
dc.description.degree | Doctor of Philosophy (PhD) | en_US |
Appears in Collections: | Open Access Dissertations and Theses |
Files in This Item:
File | Size | Format | |
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fulltext.pdf | 2.9 MB | Adobe PDF | View/Open |
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