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|Title:||Design, Fabrication and Characterization of n-Channel InGaAsP-InP Based Inversion Channel Technology Devices (ICT) for Optoelectronic Integrated Circuits (OEIC): Double Heterojunction Optoelectronic Switches (DOES), Heterojunction Field-Effect Transistors (HFET), Bipolar Inversion Channel Field-Effect Transistors (BICFET) and Bipolar Inversion Channel Phototransistors (BICPT).|
|Keywords:||Engineering Physics;Engineering Physics|
|Abstract:||<p>This thesis demonstrates inversion channel technology (ICT) as a viable technique for realizing InGaAsP-InP based monolithic optoelectronic integrated circuits (OEIC). Inversion channel technology utilizes a common substrate and a common fabrication sequence to monolithically integrate electrical, optical and optoelectronic devices, therefore, requiring compatibility in both the device structure and fabrication sequence. This technology is demonstrated by designing, fabricating and characterizing four types of ICT devices, the DOES, HFET, BICFET and BICPT, on a common structure with a common fabrication sequence. These devices were selected because they are complementary in function and provide the circuit designer all the basic elements for building monolithic OIECs: optical emitter, optoelectronic switches, bipolar and unipolar transistors, and photodetectors. Device models for InGaAsP-InP based DOES, HFET, BICFET and BICPT are developed and used to design the four device structures used in this work. These models identify the effect of device structure on the performance of the devices. The device models are also used to predict the input, output and transfer characteristics of each type of device. This provides an understanding of device physics and operation, and a basis for comparison with experimental results. A common fabrication sequence and fabrication recipes for self-aligned n-channel InGaAsP-InP based DOES, HFET, BICFET and BICPT is designed, developed and demonstrated. This includes the photomask set for self-aligned ICT devices, SiO₂ masking for self-aligned contact formation, SiO₂ sidewall passivation of mesas for ion-implantation, high accuracy RIE etching with a an in-situ QMS, implant activation for n- and p-implants in InGaAsP-InP, and metallization over tall vertical mesa structures. The operation of the DOES, HFET, BICFET and BICPT is demonstrated experimentally. Complete sets of electrical, optical and optoelectronic measurements of the input, output and transfer characteristics of each type of device is performed. These characteristics are compared with the theoretical predictions made by the models to validate the operation of each type of device. This work demonstrates ICT as a technology for realizing OEICs in the InGaAsP-InP material system, and presents the technology required to design, fabricate and characterize these integrated devices.</p>|
|Appears in Collections:||Open Access Dissertations and Theses|
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