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Design, Fabrication and Characterization of n-Channel InGaAsP-InP Based Inversion Channel Technology Devices (ICT) for Optoelectronic Integrated Circuits (OEIC): Double Heterojunction Optoelectronic Switches (DOES), Heterojunction Field-Effect Transistors (HFET), Bipolar Inversion Channel Field-Effect Transistors (BICFET) and Bipolar Inversion Channel Phototransistors (BICPT). | 577 |
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Name | January 2024 | February 2024 | March 2024 | April 2024 | May 2024 | June 2024 | July 2024 |
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Design, Fabrication and Characterization of n-Channel InGaAsP-InP Based Inversion Channel Technology Devices (ICT) for Optoelectronic Integrated Circuits (OEIC): Double Heterojunction Optoelectronic Switches (DOES), Heterojunction Field-Effect Transistors (HFET), Bipolar Inversion Channel Field-Effect Transistors (BICFET) and Bipolar Inversion Channel Phototransistors (BICPT). | 17 | 5 | 8 | 7 | 9 | 8 | 15 |
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