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| Name | Views |
|---|---|
| Design, Fabrication and Characterization of n-Channel InGaAsP-InP Based Inversion Channel Technology Devices (ICT) for Optoelectronic Integrated Circuits (OEIC): Double Heterojunction Optoelectronic Switches (DOES), Heterojunction Field-Effect Transistors (HFET), Bipolar Inversion Channel Field-Effect Transistors (BICFET) and Bipolar Inversion Channel Phototransistors (BICPT). | 739 |
Total Visits per Month
| Name | December 2024 | January 2025 | February 2025 | March 2025 | April 2025 | May 2025 | June 2025 |
|---|---|---|---|---|---|---|---|
| Design, Fabrication and Characterization of n-Channel InGaAsP-InP Based Inversion Channel Technology Devices (ICT) for Optoelectronic Integrated Circuits (OEIC): Double Heterojunction Optoelectronic Switches (DOES), Heterojunction Field-Effect Transistors (HFET), Bipolar Inversion Channel Field-Effect Transistors (BICFET) and Bipolar Inversion Channel Phototransistors (BICPT). | 13 | 17 | 18 | 16 | 20 | 16 | 3 |
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| fulltext.pdf | 536 |
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