Please use this identifier to cite or link to this item:
http://hdl.handle.net/11375/21420
Title: | Dual-Gate Mosfet Static Characteristics Generated for Mixing Applications |
Authors: | Zimmermann, Detlef |
Advisor: | Chisholm, S. H. |
Department: | Electrical Engineering |
Keywords: | mosfet;mixing application;electric;silicon |
Publication Date: | May-1970 |
Abstract: | <p> The static electrical characteristics of dual-gate silicon n-channel insulated-gate field-effect trapsistors are investigated experimentally. A mathematical model based on theoretical expressions and containing twelve parameters adjusted for. best fit was developed. </p> <p> The mathematical model was used to calculate the low frequency conversion transconductance as a function of operating conditions. </p> |
URI: | http://hdl.handle.net/11375/21420 |
Appears in Collections: | Digitized Open Access Dissertations and Theses |
Files in This Item:
File | Description | Size | Format | |
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Zimmermann_Detlef_1970May_Masters.pdf | 3.21 MB | Adobe PDF | View/Open |
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