Please use this identifier to cite or link to this item:
http://hdl.handle.net/11375/21420Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.advisor | Chisholm, S. H. | - |
| dc.contributor.author | Zimmermann, Detlef | - |
| dc.date.accessioned | 2017-05-15T19:02:56Z | - |
| dc.date.available | 2017-05-15T19:02:56Z | - |
| dc.date.issued | 1970-05 | - |
| dc.identifier.uri | http://hdl.handle.net/11375/21420 | - |
| dc.description.abstract | <p> The static electrical characteristics of dual-gate silicon n-channel insulated-gate field-effect trapsistors are investigated experimentally. A mathematical model based on theoretical expressions and containing twelve parameters adjusted for. best fit was developed. </p> <p> The mathematical model was used to calculate the low frequency conversion transconductance as a function of operating conditions. </p> | en_US |
| dc.language.iso | en | en_US |
| dc.subject | mosfet | en_US |
| dc.subject | mixing application | en_US |
| dc.subject | electric | en_US |
| dc.subject | silicon | en_US |
| dc.title | Dual-Gate Mosfet Static Characteristics Generated for Mixing Applications | en_US |
| dc.contributor.department | Electrical Engineering | en_US |
| dc.description.degreetype | Thesis | en_US |
| dc.description.degree | Master of Engineering (MEngr) | en_US |
| Appears in Collections: | Digitized Open Access Dissertations and Theses | |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| Zimmermann_Detlef_1970May_Masters.pdf | 3.21 MB | Adobe PDF | View/Open |
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