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http://hdl.handle.net/11375/20858
Title: | Bipolar Junction Transistor Static Large-Signal Compact Mathematical Models |
Authors: | Tang, Kok Pan |
Advisor: | Chisholm, S. H. |
Department: | Electrical Engineering |
Keywords: | bipolar junction, transistor, static, signal, mathematical models |
Publication Date: | May-1972 |
Abstract: | <p> Compact mathematical models used to simulate the static V-I characteristics of bipolar junction transistors are investigated. An abbreviated Gummel-Poon model and various modified Ebers-Moll models employed in computer network analysis programs are compared on the basis of their ability to simulate the common-emitter static characteristics of a silicon double-diffused transistor, the ease of the model parameter evaluation, the compromise between simplicity of model and accuracy of simulation and the ability to represent physical processes of transistor.</p> |
URI: | http://hdl.handle.net/11375/20858 |
Appears in Collections: | Digitized Open Access Dissertations and Theses |
Files in This Item:
File | Description | Size | Format | |
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Tang_Kok_P._1972May_Masters..pdf | 4.89 MB | Adobe PDF | View/Open |
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