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http://hdl.handle.net/11375/20858
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DC Field | Value | Language |
---|---|---|
dc.contributor.advisor | Chisholm, S. H. | - |
dc.contributor.author | Tang, Kok Pan | - |
dc.date.accessioned | 2016-11-30T16:37:41Z | - |
dc.date.available | 2016-11-30T16:37:41Z | - |
dc.date.issued | 1972-05 | - |
dc.identifier.uri | http://hdl.handle.net/11375/20858 | - |
dc.description.abstract | <p> Compact mathematical models used to simulate the static V-I characteristics of bipolar junction transistors are investigated. An abbreviated Gummel-Poon model and various modified Ebers-Moll models employed in computer network analysis programs are compared on the basis of their ability to simulate the common-emitter static characteristics of a silicon double-diffused transistor, the ease of the model parameter evaluation, the compromise between simplicity of model and accuracy of simulation and the ability to represent physical processes of transistor.</p> | en_US |
dc.language.iso | en_US | en_US |
dc.subject | bipolar junction, transistor, static, signal, mathematical models | en_US |
dc.title | Bipolar Junction Transistor Static Large-Signal Compact Mathematical Models | en_US |
dc.type | Thesis | en_US |
dc.contributor.department | Electrical Engineering | en_US |
dc.description.degreetype | Thesis | en_US |
dc.description.degree | Master of Engineering (MEngr) | en_US |
Appears in Collections: | Digitized Open Access Dissertations and Theses |
Files in This Item:
File | Description | Size | Format | |
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Tang_Kok_P._1972May_Masters..pdf | 4.89 MB | Adobe PDF | View/Open |
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