Please use this identifier to cite or link to this item:
http://hdl.handle.net/11375/20777
Title: | A Circuit and Noise Model of Metal-Oxide-Semiconductor Field-Effect Transistor |
Authors: | Yeh, Chuan-Sung |
Advisor: | Chisholm, S. H. |
Department: | Electrical Engineering |
Keywords: | circuit, noise, metal, oxide, semiconductor, field-effect, transistor |
Publication Date: | May-1966 |
Abstract: | <p> The Metal-Oxide Semiconductor Field-Effect Transistor is first analyzed from an active R-C transmission line view-point. The small signal circuit model and the noise model of the device are then derived and experimental results presented.</p> <p> A Chronologically arranged bibliography concerning MOS devices and associated noise studies is included at the end of this thesis.</p> |
URI: | http://hdl.handle.net/11375/20777 |
Appears in Collections: | Digitized Open Access Dissertations and Theses |
Files in This Item:
File | Description | Size | Format | |
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Yeh_Chuan-Sung_1966May_Masters..pdf | 3.16 MB | Adobe PDF | View/Open |
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