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Please use this identifier to cite or link to this item: http://hdl.handle.net/11375/20777
Title: A Circuit and Noise Model of Metal-Oxide-Semiconductor Field-Effect Transistor
Authors: Yeh, Chuan-Sung
Advisor: Chisholm, S. H.
Department: Electrical Engineering
Keywords: circuit, noise, metal, oxide, semiconductor, field-effect, transistor
Publication Date: May-1966
Abstract: <p> The Metal-Oxide Semiconductor Field-Effect Transistor is first analyzed from an active R-C transmission line view-point. The small signal circuit model and the noise model of the device are then derived and experimental results presented.</p> <p> A Chronologically arranged bibliography concerning MOS devices and associated noise studies is included at the end of this thesis.</p>
URI: http://hdl.handle.net/11375/20777
Appears in Collections:Digitized Open Access Dissertations and Theses

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