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Please use this identifier to cite or link to this item: http://hdl.handle.net/11375/20777
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DC FieldValueLanguage
dc.contributor.advisorChisholm, S. H.-
dc.contributor.authorYeh, Chuan-Sung-
dc.date.accessioned2016-11-04T12:36:13Z-
dc.date.available2016-11-04T12:36:13Z-
dc.date.issued1966-05-
dc.identifier.urihttp://hdl.handle.net/11375/20777-
dc.description.abstract<p> The Metal-Oxide Semiconductor Field-Effect Transistor is first analyzed from an active R-C transmission line view-point. The small signal circuit model and the noise model of the device are then derived and experimental results presented.</p> <p> A Chronologically arranged bibliography concerning MOS devices and associated noise studies is included at the end of this thesis.</p>en_US
dc.language.isoen_USen_US
dc.subjectcircuit, noise, metal, oxide, semiconductor, field-effect, transistoren_US
dc.titleA Circuit and Noise Model of Metal-Oxide-Semiconductor Field-Effect Transistoren_US
dc.typeThesisen_US
dc.contributor.departmentElectrical Engineeringen_US
dc.description.degreetypeThesisen_US
dc.description.degreeMaster of Engineering (MEngr)en_US
Appears in Collections:Digitized Open Access Dissertations and Theses

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