Please use this identifier to cite or link to this item:
http://hdl.handle.net/11375/20387| Title: | Ion Implanted Solar Cells |
| Authors: | Vanderwel, Theodore |
| Advisor: | Shewchun, J. |
| Department: | Engineering Physics |
| Keywords: | Ion Implanted;Solar Cells;monocrystalline silicon;dopant concentration |
| Publication Date: | Apr-1978 |
| Abstract: | <p> Ion implantation is investigated as a technique to fabricate solar cells on monocrystalline silicon. The electrical properties of the implanted layer, as determined using the Hall Effect, and solar cell performance have beep studied for varying implant species (As and P), implanted dopant concentration (10^18 - 10^21 cm^-3), implanted substrate temperature (55° to 300°K} and annealing temperature (700° to 900°C). Some progress has been made toward the optimization of the various parameters. </p> |
| Description: | One of two project reports: The other part is designated PART B: OFF-CAMPUS PROJECT. |
| URI: | http://hdl.handle.net/11375/20387 |
| Appears in Collections: | Digitized Open Access Dissertations and Theses |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| Vanderwel_Theodore_M_1978Apr_Masters.pdf | 2.73 MB | Adobe PDF | View/Open |
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