Ion Implanted Solar Cells
| dc.contributor.advisor | Shewchun, J. | |
| dc.contributor.author | Vanderwel, Theodore | |
| dc.contributor.department | Engineering Physics | en_US |
| dc.date.accessioned | 2016-09-21T16:42:33Z | |
| dc.date.available | 2016-09-21T16:42:33Z | |
| dc.date.issued | 1978-04 | |
| dc.description | One of two project reports: The other part is designated PART B: OFF-CAMPUS PROJECT. | en_US |
| dc.description.abstract | <p> Ion implantation is investigated as a technique to fabricate solar cells on monocrystalline silicon. The electrical properties of the implanted layer, as determined using the Hall Effect, and solar cell performance have beep studied for varying implant species (As and P), implanted dopant concentration (10^18 - 10^21 cm^-3), implanted substrate temperature (55° to 300°K} and annealing temperature (700° to 900°C). Some progress has been made toward the optimization of the various parameters. </p> | en_US |
| dc.description.degree | Master of Engineering (MEngr) | en_US |
| dc.description.degreetype | Thesis | en_US |
| dc.identifier.uri | http://hdl.handle.net/11375/20387 | |
| dc.language.iso | en | en_US |
| dc.subject | Ion Implanted | en_US |
| dc.subject | Solar Cells | en_US |
| dc.subject | monocrystalline silicon | en_US |
| dc.subject | dopant concentration | en_US |
| dc.title | Ion Implanted Solar Cells | en_US |