Ion Implanted Solar Cells

Please use this identifier to cite or link to this item: http://hdl.handle.net/11375/20387

Full metadata record

DC Field	Value	Language
dc.contributor.advisor	Shewchun, J.	-
dc.contributor.author	Vanderwel, Theodore	-
dc.date.accessioned	2016-09-21T16:42:33Z	-
dc.date.available	2016-09-21T16:42:33Z	-
dc.date.issued	1978-04	-
dc.identifier.uri	http://hdl.handle.net/11375/20387	-
dc.description	One of two project reports: The other part is designated PART B: OFF-CAMPUS PROJECT.	en_US
dc.description.abstract	<p> Ion implantation is investigated as a technique to fabricate solar cells on monocrystalline silicon. The electrical properties of the implanted layer, as determined using the Hall Effect, and solar cell performance have beep studied for varying implant species (As and P), implanted dopant concentration (10^18 - 10^21 cm^-3), implanted substrate temperature (55° to 300°K} and annealing temperature (700° to 900°C). Some progress has been made toward the optimization of the various parameters. </p>	en_US
dc.language.iso	en	en_US
dc.subject	Ion Implanted	en_US
dc.subject	Solar Cells	en_US
dc.subject	monocrystalline silicon	en_US
dc.subject	dopant concentration	en_US
dc.title	Ion Implanted Solar Cells	en_US
dc.contributor.department	Engineering Physics	en_US
dc.description.degreetype	Thesis	en_US
dc.description.degree	Master of Engineering (MEngr)	en_US
Appears in Collections:	Digitized Open Access Dissertations and Theses

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Vanderwel_Theodore_M_1978Apr_Masters.pdf Open Access		2.73 MB	Adobe PDF	View/Open