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http://hdl.handle.net/11375/11834
Title: | Development of a Si-Based Resonant-Cavity-Enhanced Infrared Photodetector |
Authors: | Gagnon, Adrian J. |
Advisor: | Mascher, Peter |
Department: | Engineering Physics |
Keywords: | Infrared Photodetector;Resonant-Cavity-Enhanced;RCE;Microcavity;Multilayer Structure;Engineering Physics;Engineering Physics |
Publication Date: | Apr-2012 |
Abstract: | <p>Resonant-cavity-enhanced (RCE) photodetectors have recently attracted attention due to their wavelength selectivity and high efficiency in comparison to conventional photodetectors. The goal of this ongoing research initiative is to develop a Si-based RCE infrared photodetector using inductively coupled plasma chemical vapor deposition (ICP-CVD) as the primary fabrication method. At the current stage of the project, wavelength-selective optical structures have been successfully fabricated using Si/SiO<sub>2</sub> layer pairs. These structures demonstrate sharp transmission peaks at their intended wavelength, making them potentially useful for efficient photodetection. The next phase of the photodetector development process involves using ion implantation to introduce dopants and create the bias.The project also explores the temperature sensing capability of the resonant-cavity structures. The temperature sensitivity tests indicate that the specific type of structure fabricated in this project may be relevant for fiber-optic temperature sensing applications. Additional testing is required to evaluate the performance characteristics of such structures as Fabry-Perot sensors capable of wavelength-encoded temperature measurement.</p> |
URI: | http://hdl.handle.net/11375/11834 |
Identifier: | opendissertations/6772 7746 2432045 |
Appears in Collections: | Open Access Dissertations and Theses |
Files in This Item:
File | Size | Format | |
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fulltext.pdf | 1.25 MB | Adobe PDF | View/Open |
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