Development of a Si-Based Resonant-Cavity-Enhanced Infrared Photodetector

Abstract

<p>Resonant-cavity-enhanced (RCE) photodetectors have recently attracted attention due to their wavelength selectivity and high efficiency in comparison to conventional photodetectors. The goal of this ongoing research initiative is to develop a Si-based RCE infrared photodetector using inductively coupled plasma chemical vapor deposition (ICP-CVD) as the primary fabrication method. At the current stage of the project, wavelength-selective optical structures have been successfully fabricated using Si/SiO₂ layer pairs. These structures demonstrate sharp transmission peaks at their intended wavelength, making them potentially useful for efficient photodetection. The next phase of the photodetector development process involves using ion implantation to introduce dopants and create the bias.The project also explores the temperature sensing capability of the resonant-cavity structures. The temperature sensitivity tests indicate that the specific type of structure fabricated in this project may be relevant for fiber-optic temperature sensing applications. Additional testing is required to evaluate the performance characteristics of such structures as Fabry-Perot sensors capable of wavelength-encoded temperature measurement.</p>