Ion Implantation Damage in GaAs at Low Temperatures

Abstract

<p> This thesis reports on the investigation of damage production in GaAs at low temperature using the channeling-backscattering technique.</p> <p> The study has been divided into two parts; first, the investigation of damage produced by 2 MeV helium ions in unimplanted and previously implanted samples with varied doses of 40 keV nitrogen and bismuth. The helium beam damage has been found to depend on the initial state of damage of the samples. In the second part the damage production due to 40 keV N+, As+, Sb+ and Bi+ ion implantation has been investigated. A comparison with damage production due to the corresponding 80 keV diatomic implants has also been carried out. No enhancement in the damage production was noticed due to the molecular implants.</p>