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Second Harmonic Generation from InGaAsP Waveguide at 1.3 gm Wavelength

dc.contributor.advisorSimmons, J. G.
dc.contributor.advisorThompson, D.
dc.contributor.authorBierman, Robert Michael
dc.contributor.departmentEngineering Physicsen_US
dc.date.accessioned2024-01-18T17:33:08Z
dc.date.available2024-01-18T17:33:08Z
dc.date.issued1992-10
dc.description.abstractResults of research on surface emission from a waveguide due to second-harmonic generation are presented. This concept has been applied and demonstrated here in the InP-InGaAsP material system for the first time, using a fundamental wavelength of 1.32 |im and a harmonic surface emission at 660 nm. The surface emission is the result of the nonlinear mixing of two counterpropagating modes in a waveguide. The theory of nonlinear optics that produces this effect is explained, leading up to a model that describes the behaviour of the surface emitting waveguide (SEWG). This model is then used to design a pseudo-optimized structure that was subsequently grown, characterized and tested. Device performance and behaviour are compared with theoretical predictions.en_US
dc.description.degreeMaster of Engineering (ME)en_US
dc.description.degreetypeThesisen_US
dc.identifier.urihttp://hdl.handle.net/11375/29407
dc.language.isoenen_US
dc.subjectsecond-harmonic generationen_US
dc.subjectwaveguideen_US
dc.subjectsurface emissionen_US
dc.titleSecond Harmonic Generation from InGaAsP Waveguide at 1.3 gm Wavelengthen_US
dc.typeThesisen_US

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