Quantum Transport in Biased Semiconductor Superlattices

Abstract

<p> Thi thesis focuses on modelling electron dynamics in biased semiconductor superlattices, in the time domain. The numerical framework created on the basis of recently developed transparent boundary conditions proved to be an efficient and stable means to carry out simulations. A number of phenomena were modelled, with particular attention given to interminiband Rabi oscillations (RO); a quantitative description of the latter was given. We also report an observation of RO across three minibands in the high field regime. The detailed resolution of wavepacket dynamics allowed for conclusions to be drawn regarding the physical basis of RO. Due to similarity of the investigated system with other areas of physics, the approach developed could be further applied to study non-linear transport phenomena in cold atom traps and photonics. </p>