Bipolar Junction Transistor Static Large-Signal Compact Mathematical Models

Abstract

<p> Compact mathematical models used to simulate the static V-I characteristics of bipolar junction transistors are investigated. An abbreviated Gummel-Poon model and various modified Ebers-Moll models employed in computer network analysis programs are compared on the basis of their ability to simulate the common-emitter static characteristics of a silicon double-diffused transistor, the ease of the model parameter evaluation, the compromise between simplicity of model and accuracy of simulation and the ability to represent physical processes of transistor.</p>