Spectral Properties of 1.3 μm InGaAsP Semiconductor Diode Lasers

Abstract

<p>Physical mechanisms responsible for the above-threshold spectral output of 1.3 μm InGaAsP semiconductor diode lasers are presented and discussed. Measurements<br />of the facet emission of a large number of devices indicate modulations in the below-threshold<br />RmGm product which can be used to predict and explain the shape of the above-threshold mode profile for output power levels of less than approximately 5 mW. Above-threshold<br />measurements using devices incorporated into a shon-external-cavity<br />configuration show that a symmetric, nonlinear gain mechanism is required to explain the<br />spectral properties for output power levels in a single mode which are greater that 5 mW. Thus it is concluded that both the effects of scattering centres and nonlinear gain are required to model accurately the spectral output of 1.3 μm InGaAsP semiconductor diode lasers.</p>