Growth Optimization and Fabrication of 980nm InGaAs/GaAs/InGaP Lasers

Abstract

The growth optimization and fabrication of 980nm quantum well (QW) lasers is presented. Photoluminescence (PL) spectroscopy is used to determine the optimized growth conditions for the QWs. The results are presented for optimization of both growth temperature and group V overpressure. Broad area lasers, with active regions grown at and around optimized QW growth conditions, are fabricated and characterized under pulsed conditions. These results are used to determine the optimum growth conditions for a ridge waveguide (RWG) laser structure. Once grown, RWG lasers are fabricated and characterized under continuous wave (CW) conditions. External quantum efficiencies as high as 71 % and cavity losses as low as 5.2 cm-1 are achieved.