A Circuit and Noise Model of Metal-Oxide-Semiconductor Field-Effect Transistor
| dc.contributor.advisor | Chisholm, S. H. | |
| dc.contributor.author | Yeh, Chuan-Sung | |
| dc.contributor.department | Electrical Engineering | en_US |
| dc.date.accessioned | 2016-11-04T12:36:13Z | |
| dc.date.available | 2016-11-04T12:36:13Z | |
| dc.date.issued | 1966-05 | |
| dc.description.abstract | <p> The Metal-Oxide Semiconductor Field-Effect Transistor is first analyzed from an active R-C transmission line view-point. The small signal circuit model and the noise model of the device are then derived and experimental results presented.</p> <p> A Chronologically arranged bibliography concerning MOS devices and associated noise studies is included at the end of this thesis.</p> | en_US |
| dc.description.degree | Master of Engineering (MEngr) | en_US |
| dc.description.degreetype | Thesis | en_US |
| dc.identifier.uri | http://hdl.handle.net/11375/20777 | |
| dc.language.iso | en_US | en_US |
| dc.subject | circuit, noise, metal, oxide, semiconductor, field-effect, transistor | en_US |
| dc.title | A Circuit and Noise Model of Metal-Oxide-Semiconductor Field-Effect Transistor | en_US |
| dc.type | Thesis | en_US |