Fundumental One-Dimensional Analysis of Photo-Diodes

Abstract

<p>the program developed by A.M. Start, in his paper, Fundamental One-Dimentional Analysis of Transistors, Philips Research Report Supplements, #4, 1976, has been modified to handle high voltage, reversed biased p-i-n photo-diodes. The physical involved in the development of stark;s model is summarized and three different p-i-n diodes are analyzed. A Schottky barrier is also analyzed by assuming the metal contact is a very highly doped semiconductor material. A listing of the program is given in the appendices, as well as a description of the program and a user's guide. Te program is written in Fortran, was run on a CDC 6400 in double precision (giving 29 digits accuracy), requiring 45 k of memory and 300 to 1000 seconds run time.</p>