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DOUBLE TUNING OF A DUAL EXTERNAL CAVITY SEMICONDUCTOR LASER FOR BROAD WAVELENGTH TUNING WITH HIGH SIDE MODE SUPPRESSION

dc.contributor.advisorKleiman, R.N.en_US
dc.contributor.advisorHaddara, Y.M.en_US
dc.contributor.authorAbu-El-Magd, Alien_US
dc.contributor.departmentElectrical and Computer Engineeringen_US
dc.date.accessioned2014-06-18T16:45:48Z
dc.date.available2014-06-18T16:45:48Z
dc.date.created2011-05-27en_US
dc.date.issued2011en_US
dc.description.abstract<p>Over the past few years various successful miniaturization attempts of External Cavity Semiconductor Lasers (ECSL) were published. They built upon the rich literature of ECSL configurations that were extensively analyzed and improved upon since the 1960s. This was merged with the microfabrication techniques of 3D structures based on MEMS technology. The main drive for miniaturizing such tunable lasers in the recent past was the huge potential for such devices in all optical networks specifically as signal sources that enable Wavelength Division Multiplexing (WDM).<br />This thesis compares the different configurations chosen to build tunable lasers using MOEMS technology. Our criteria of comparison include wavelength tuning range, side mode suppression, tuning speed and device dimensions. Designs based on the simple ECSL with a movable external mirror suffered from the tradeoff between tuning range and Side Mode Suppression SMS. To overcome this limitation most designs adopted grating based tuning using the Littrow or Littman/Metcalf configurations. These configurations allow for much better tuning results but don’t lend themselves easily to miniaturization. The grating based devices were bulky and quite complicated to realize.<br />We propose the adoption of the Zhu/Cassidy double external cavity configuration. It retains the simplicity of the single external mirror configuration along with the tuning range and the SMS of including multiple tuning elements. In its original form this configuration suffered from mode hopping within the tuning range. Thorough simulation, design and experimental evidence is presented in this work to show that by extending the configuration to allow full control over both optical tuning elements this drawback can be eliminated.<br />Our proposed design would reduce the form factor to < 300μm x 200μm x 200μm. The voltage required to tune through all the modes is < 40V and the resonant frequency of the mirror is in the 10s of MHz order of magnitude. When coupled with a multimode laser of a sufficiently broad lasing profile this setup should enable a tuning range > 72nm with a SMS >20dB.</p>en_US
dc.description.degreeMaster of Applied Science (MASc)en_US
dc.identifier.otheropendissertations/4294en_US
dc.identifier.other5274en_US
dc.identifier.other2035304en_US
dc.identifier.urihttp://hdl.handle.net/11375/9144
dc.subjecttunable lasersen_US
dc.subjectexternal cavity lasersen_US
dc.subjectMEOMSen_US
dc.subjectMEMSen_US
dc.subjectdual external cavityen_US
dc.subjectElectromagnetics and photonicsen_US
dc.subjectElectronic Devices and Semiconductor Manufacturingen_US
dc.subjectEngineering Physicsen_US
dc.subjectNanotechnology fabricationen_US
dc.subjectOpticsen_US
dc.subjectElectromagnetics and photonicsen_US
dc.titleDOUBLE TUNING OF A DUAL EXTERNAL CAVITY SEMICONDUCTOR LASER FOR BROAD WAVELENGTH TUNING WITH HIGH SIDE MODE SUPPRESSIONen_US
dc.typethesisen_US

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