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Ultrashort-Pulse Laser Systems Based on External-Cavity Mode-Locked InGaAs-GaAs Semiconductor Oscillators and Semiconductor or Yb:Fibre Amplifiers

dc.contributor.advisorHaugen, Harold K.
dc.contributor.authorBudz, Andrew John
dc.contributor.departmentEngineering Physicsen_US
dc.date.accessioned2015-05-08T14:43:01Z
dc.date.available2015-05-08T14:43:01Z
dc.date.issued2008-11
dc.descriptionPages 10, 46, 126, 142 and 146 have been omitted because they were completely blank.en_US
dc.description.abstract<p> This thesis describes the development of a tunable, ultrashort-pulse semiconductor-based laser system operating in the 1 μm wavelength region. The design of the oscillator is based on a two-contact long-wavelength InGaAs-GaAs quantum-well semiconductor device containing integrated gain and saturable absorber sections. A key design component of the oscillator is the fabrication of a curved ridge-waveguide in the gain section of the device, which allows the laser to be operated in a compact, linear external cavity. Under conditions of passive or hybrid mode-locking, the semiconductor oscillator can generate pulses of 1 to 10 ps in duration, which are tunable from 1030 to 1090 nm. The oscillator is also capable of being passively mode-locked at harmonics of the cavity round-trip frequency, allowing tuning of the pulse repetition rate from 0.5 to over 5 GHz. Noise measurements on two independently hybridly mode-locked semiconductor lasers reveal that the absolute noise of each laser is dominated by phase noise at frequencies below 10^5 Hz, while amplitude noise dominates at higher frequencies.</p> <p>Semiconductor and fibre optical amplifiers are used to scale the average power level of the mode-locked pulses. Semiconductor optical amplifiers consisting of narrow-stripe and flared-waveguide designs have been fabricated using the same material structure as that of the mode-locked semiconductor oscillator. Narrow-stripe devices with a length of 800 μm have produced amplified average signal powers of 13 mW, while 1700-μm-long, 2° flared-waveguide devices have produced amplified average signal powers of 50 mW. A fibre-based system consisting of a single-mode double-clad Yb-doped fibre has been constructed to investigate the suitability of a mode-locked diode laser as a seed-source for a Yb:fibre amplifier. Amplified average signal powers of up to 1.4 W have been obtained at the output of the fibre for a launched pump power of 2.1 W. Compression of the amplified pulses using a modified dual-grating compressor yields pulse durations as low as 500 fs and a peak power of up to 1.5 kW.</p> <p> Preliminary work is reported on the development of a novel dual-wavelength optical source consisting of two synchronized mode-locked diode lasers and a polarization-maintaining Yb:fibre amplifier. Numerical simulations based on a rate-equation model for the amplifier gain are conducted to investigate the performance characteristics of a Yb:fibre amplifier when operated under dual-wavelength signal amplification. The simulations are used to predict and optimize the performance of the fibre amplifier for two mode-locked semiconductor-seed-oscillators operating at wavelengths of 1040 and 1079 nm. Good agreement is obtained between the simulations and experimental results. </p>en_US
dc.description.degreeDoctor of Philosophy (PhD)en_US
dc.description.degreetypeThesisen_US
dc.identifier.urihttp://hdl.handle.net/11375/17268
dc.language.isoen_USen_US
dc.subjectultrashort-pulse, semiconductor, laser, system, InGaAs-GaAs, oscillatoren_US
dc.titleUltrashort-Pulse Laser Systems Based on External-Cavity Mode-Locked InGaAs-GaAs Semiconductor Oscillators and Semiconductor or Yb:Fibre Amplifiersen_US
dc.typeThesisen_US

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