A Comparison of Beam Induced Damage from Xenon and Gallium Focused Ion Beams
| dc.contributor.advisor | Bassim, Nabil | |
| dc.contributor.author | Norris, Samuel | |
| dc.contributor.department | Materials Science and Engineering | en_US |
| dc.date.accessioned | 2019-08-12T15:09:54Z | |
| dc.date.available | 2019-08-12T15:09:54Z | |
| dc.date.issued | 2019 | |
| dc.description.abstract | Focused ion beam/scanning electron microscopy (FIB/SEM) is a tool commonly used for applications including preparation of site-specific transmission electron microscopy (TEM) samples, nanotomography, and electronic circuit edit. Another potential application is optical device prototyping; however, the ion beam itself has been shown to cause damage fatal to device operation. This thesis first includes several examples of FIB-fabricated optical devices that had limited functionality compared to simulation. Second, the underlying causes of ion beam-induced optical damage from gallium and xenon ion sources is characterized. Monte Carlo simulations of ion-solid interactions were confirmed using TEM analysis to measure the thickness of the damaged layer. For crystalline samples such as silicon, Raman response can be used as a measure of lattice damage. Using these techniques, it was found that optical damage from a gallium beam is more severe than from a xenon beam, and occurs in the form of lattice amorphization and implantation of beam ions. This damage hinders optical coupling by altering the physical and electronic structure of the sample. Consequently, the xenon PFIB is a better choice for optical device prototyping. | en_US |
| dc.description.degree | Master of Science (MSc) | en_US |
| dc.description.degreetype | Thesis | en_US |
| dc.description.layabstract | The second half of the 20th century saw the advent of nanotechnology, both in the context of understanding the structure of the natural world beyond the limit of light microscopy, as well as manipulating materials to create useful microscopic devices, including the computers ubiquitous in today’s life. One technology that has contributed to today’s nano-centric paradigm is the focused ion beam/scanning electron microscope (FIB/SEM). The FIB/SEM is used to machine materials with extreme precision for many diverse applications such as modifying microcircuits, three-dimensional (3D) nanotomography, or to prepare samples for other microscopy techniques. For some applications, however, damage to the sample from the ion beam can be fatal. New ion sources have become available in the past ten years that may cause less damage to samples, and thus open up new applications for FIB. This thesis includes first a description of a series of optical devices prototyped using FIB. This is followed by a comparison of the damage induced by the conventional liquid gallium ion source and new xenon plasma ion sources, and a discussion of the relative merits of the ion sources for optical device fabrication. | en_US |
| dc.identifier.uri | http://hdl.handle.net/11375/24675 | |
| dc.language.iso | en | en_US |
| dc.subject | FIB | en_US |
| dc.subject | Ion beam | en_US |
| dc.subject | lithography | en_US |
| dc.subject | nanofabrication | en_US |
| dc.title | A Comparison of Beam Induced Damage from Xenon and Gallium Focused Ion Beams | en_US |
| dc.type | Thesis | en_US |