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X-Ray Absorption Spectroscopy of Pd40Ni40P20 Metallic Glass and Boron Doped Silicon

dc.contributor.advisorHitchcock, A. P.
dc.contributor.authorEsposto, Frank J.
dc.contributor.departmentNoneen_US
dc.date.accessioned2016-05-09T19:31:38Z
dc.date.available2016-05-09T19:31:38Z
dc.date.issued1990-07
dc.description.abstract<p> Ni K extended X-ray absorption fine structure spectroscopy recorded with synchrotron radiation at 77 K and 300 K, has been used to investigate various annealed Pd40Ni40P20 metallic glass samples. The structural parameters (radial distance, coordination number, Debye Waller factor) for the Fourier filtered first coordination shell were obtained via curve analysis using MFIT (multifitting analysis) and plotted as a function of annealing temperature. Similar trends between 77 K and 300 K data were not observed in all cases. These results lead one to believe that the curve fitting procedure is not yet optimized and makes one sceptical of attributing any meaning to the results.</p> <p> X-ray absorption near edge spectroscopy via electron yield detection has also been used to study the B K edge in boron doped silicon. It was found that a strong peak at 195 eV is directly related to trigonally coordinated boron. Non trigonally coordinated boron did not seem to produce this spike. Results show that B 1s spectroscopy is a very sensitive probe of the local structure of boron.</p>en_US
dc.description.degreeMaster of Science (MSc)en_US
dc.description.degreetypeThesisen_US
dc.identifier.urihttp://hdl.handle.net/11375/19253
dc.language.isoen_USen_US
dc.subjectabsorption, spectroscopy, metallic, glass, boron, doped, silicon, probeen_US
dc.titleX-Ray Absorption Spectroscopy of Pd40Ni40P20 Metallic Glass and Boron Doped Siliconen_US
dc.typeThesisen_US

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