Microwave Propagation in n-type Germanium Subjected to a High Electric Field

Abstract

<p> A method for the measurement of the microwave conductivity of a semiconductor subjected to a high electric field is described, which provides for varying angles between the microwave and applied electric field vectors. The results of measurements on 10 ohm-em. n-type germanium at 9.522 GHz with applied electric fields up to 3KV/cm are given. </p> <p> The measurements show that the microwave conductivity is controlled by the differential carrier mobility (∂V/∂E) for the condition of microwave and applied electric field vectors parallel. For the case of the fields at right angles the microwave conductivity is controlled by a carrier mobility intermediate between the d. c. mobility (v/B) and the differential mobility (∂V/∂E). </p> <p> Theoretical expressions for the performance of a proposed "Hot Electron Microwave Rotator" are developed. </p>