AN INFRARED OPTICAL PHASE MODULATOR IN GaAs AND THE QCSE IN AlxGa1-xAs-GaAs QUANTUM WELLS

Abstract

This thesis describes the design, fabrication and characterisation of an infrared optical waveguide phase modulator. The modulator was fabricated in GaAs utilizing a carrier-concentration-reduction rib waveguide structure with a Schottky diode contact to allow the application of an electric field across the waveguide region. Measurements of the phase modulation are presented with results agreeing with the theoretical predictions of an electrooptic coefficient of 1.2 x 10-12 m/V at 1.15 //m. Fabrication techniques and problems are thoroughly discussed. The second part of this thesis consists of measurements of the quantum confined stark shift in an AlGaAs-GaAs multiple quantum well p-i-n diode structure. The results show useful changes in absorption with applied electric field. Transmission measurements as a function of applied field are presented for TE polarized light in a waveguiding geometry as well as photocurrent measurements in the same geometry and with light incident perpendicular to the MQW layers. Reasonable agreements for the relative field induced shifts of the excitonic feature are found but the absolute position of the feature is blue shifted by 7 meV with respect to the theoretically predicted position.