Multi-component Defect Model for Semiconductor Lasers

Abstract

<p>A multi-component defect model for degradation in semiconductor lasers is derived, discussed, and compared to experimental data and other existing degradation models for semiconductor lasers. The degradation model was designed to describe the change of threshold current as a function of aging time and is based on a population growth model in which only limited resources for the creation or growth of defects exist. Besides degradation, defect-annealing effect is incorporated into the multi-component model to examine high-power lasers that exhibit an annealing effect. A compatible lifetime estimation scheme is derived, discussed, and compared to the Hartman-Dixon method [Appl. Phys. Lett. 26, 239 (1975)] for lifetime estimation. Photoluminescence topography was utilized to probe the surface stability of semiconductor lasers during aging. A degradation of photoluminescence yield was observed at the active region. The degradation signifies an increase of surface recombination velocity. However, the reflectance of the surface is not modified by the aging-induced photoluminescence degradation.</p>