CONTROL OF SILVER AND SILICON MICROSTRUCTURE VIA LOW DOSE ION IMPLANTATION

Abstract

Ag thin film dewetting upon high temperature annealing is a non-trivial problem for its application in the semiconductor industry as an ohmic contact metal. Thus, preventing Ag thin film from dewetting is of great importance. Typically, adhesion-promoting layers of chromium are deposited to prevent dewetting, but this deposition has its own process optimization parameters. In this thesis, we introduce an alternative, novel strategy for dewetting prevention via Si or In ion implantation. Electron microscopy including SEM, AFM and AES are conducted to characterize changes in film morphology after ion implantation. Thermodynamic simulation is established to better understand the mechanism of this anti-dewetting approach as well as to predict the performance of doped Ag thin films.

It is found that Ag films implanted by a trace amount of Si dopants remain intact after 24 h annealing at 530℃ rather than break down into isolated particles as pure Ag film did. Furthermore, Ag grains in doped samples are much smaller than that in non-doped samples and higher Si or In doses contribute to smaller grains, indicating that a retarding force against film grain growth is introduced by the implanting species. Fortunately, electrical conductivity and optical reflectivity of doped films change trivially, suggesting an insignificant influence of external species on the film performance. The retarding force suppressing film grain growth is demonstrated to be solute drag, which will introduce a size limit towards Ag grain growth. A grain growth model including the solute drag effect is established here to describe the grain growth process. Combining our thermodynamic simulation with our grain growth model in the presence of the solute drag effect, the critical grain diameter to initiate agglomeration of 100 nm thick Ag thin film is calculated to be 350 nm and the critical Si dose to prevent 100 nm thick Ag thin film from dewetting is predicted to be 2.0×1013 per cm2.

Finally, we successfully synthesize ultrathin Si thin films via ion implantation and pattern as-deposited Si films by implanting through a hard mask in order to identify some steps towards synthesizing 2-D silicon, or silicene. The as-achieved pattern has an identical shape as that of mask, suggesting Si atoms only diffuse within the implanting regions during thermal annealing. Even though only amorphous Si films are prepared at present, this novel strategy possesses potential to fabricated CMOS-compatible 2-D silicon films for semiconductor industry.