Photochemical etching of n-InP

Abstract

<p>The photochemical etching behaviour of n-InP was examined by producing holes or vias through the samples. The rate of material removal and quality of the resulting vias were studied as a function of: electrolyte pH, temperature, and type of metal ion impurity, illumination level, frequency, and duty cycle, sample surface quality, area, and roughness, and a second light source. The project was undertaken to prepare thin samples for the transmission electron microscope (TEM). The quality of sample produced for the TEM was acceptable, as determined by comparing the thin sections to thin sections produced by other traditional sample preparation techniques. This new method of sample preparation has the important advantages of being able to thin at a precisely predetermined region and that the resulting thin regions are surrounded by a thick built-in stabilizing structure which improves handleability.</p>