Luminescent Silicon Carbonitride Thin Films Grown using ECR PECVD: Fabrication and Characterization

Abstract

Silicon, the cornerstone semiconductor of microelectronics, has seen growing interest as a low-cost material in photonics. Nanoscience has employed various strategies to overcome its fundamentally inefficient visible light emission such as developing new silicon-based nanostructures and materials. Each of the proposed materials has its own advantages and disadvantages in attempting to reach commercialization. Silicon carbonitride (SiCxNy) is a less-studied and multi-functional material with tunable optical features. Despite reports on promising mechanical properties of SiCxNy thin films, they have not yet been well explored optically. This thesis presents the first in-depth analysis of the luminescent properties of SiCxNy thin films at a broad range of compositions and temperatures. To better understand this ternary structure, the reported data of the two fairly well studied binary structures was used as a reference. Therefore, three classes of silicon-based materials were produced and explored; SiCxNy, SiNx, and SiCx. Samples were fabricated using one of the common methods in the semiconductor industry; electron cyclotron resonance plasma enhanced chemical vapour deposition (ECR PECVD). A multitude of characterization techniques were utilized including; optical methods (ultraviolet-visible spectroscopy (UVVIS), variable angle spectroscopic ellipsometry (VASE), photoluminescence (PL)) and structural techniques (elastic recoil detection (ERD), Rutherford backscattering spectrometry (RBS), X-ray photoelectron spectroscopy (XPS), Fourier transform infrared spectroscopy (FTIR), high-resolution transmission electron microscopy (HR-TEM)). In view of the exploring of emission properties of SiCxNy materials, our approach was towards the enhancement of the visible emission by adjusting the film composition and subsequent thermal treatment. First, a systematic study of the influence of carbon on the optical, compositional, and structural properties of SiCxNy was carried out. This investigation was followed by an exploration of influence of growth conditions on the visible emission and its connection with the other film properties including hydrogen concentration, microstructure, and composition. In addition, hydrogen diffusion was explored and associated with two featured annealing temperatures. The key element of this thesis is the comprehensive report on the interdependency of the visible light emission and all optical, structural, and compositional features of SiCxNy structures. Unlocking the potential of this ternary and less studied material can appeal to the silicon photonics community to implement it in anti-reflection, solar cell, and sensing applications, and in particular as a substitution of SiNx used in existing microelectronic devices.