A Model For Magnetic Bubbles in Ion Implanted Type of Channels

Abstract

<p>The purpose of this thesis is to present a model for magnetic domains wholly situated inside an ion implanted channel. In this model, ion implantation is assumed to change the saturation magnetization, the wall energy density, and the in-plane susceptibility. As a result the channel and the domain induce magnetic pole distributions on the channel walls which interact with the bubble domain, altering its geometry and energy. An analysis for a circular domain with variable penetration and location in the channel, as well as a variational formulation for a generally deformable domain of fixed penetration in the implanted channel, are presented. The latter case has been programmed and the results obtained are discussed. The case of a domain penetrating into the unimplanted region outside the channel is also considered.</p>