Nanowire Quantum Dot Photodetectors

Abstract

InAs/GaAs quantum dots (QDs) embedded within InP/GaP nanowires (NWs) were grown on Si substrates by Au-assisted and self-assisted vapor-liquid-solid (VLS) growth using molecular beam epitaxy (MBE). The morphology and structure of the NWs was characterized using scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The samples were analysed using photoluminescence (PL) and photocurrent measurements to study the properties of NW-based QDs. The composition of InAs x P 1-x QDs embedded within InP NWs was varied from x = 0.25 to x = 1, demonstrating the tuning of quantum confined energy levels. PL measurements demonstrated an emission peak that shifted towards lower energy levels as the As composition was increased. This result was also observed for QD absorption peaks through wavelength-dependent room temperature photocurrent measurements. InP NWs were successfully passivated with an AlInP shell, which was demonstrated through PL analysis. The growth mechanism of patterned self-assisted GaP NWs on Si was studied through SEM and TEM analysis. It was found that for large V/III flux ratios the Ga seed particle reduced in volume throughout growth, which led to a smaller NW diameter. Conversely, for small V/III flux ratios the Ga seed particle increased in volume throughout growth, resulting in larger NW diameters. The dependence of V/III flux ratio on NW growth was characterized, allowing the tuning of NW diameter. iv GaP NWs with p-i-n junctions were fabricated on a Si substrate with GaAs QDs embedded within the intrinsic region. To the author’s knowledge, this is the first time such a device was demonstrated. The device demonstrated diode characteristics as expected for a p-n junction. Wavelength-dependent photocurrent measurements demonstrated the absorption of light within GaAs QDs, which was collected through electric field dependent tunneling and thermionic emission. The absorption of light extended beyond the bandgap of GaP due to the GaAs QDs.