A Study of the Mechanical Properties of Silicon-Based Thin Films Deposited by ECR-PECVD and ICP-CVD

Abstract

<p>Silicon-based dielectric thin films including amorphous hydrogenated aluminium-doped silicon oxides (<em>a-</em>SiAl_xO_y:H), amorphous hydrogenated silicon nitrides (<em>a-</em>SiN_x:H), and amorphous hydrogenated silicon carbides (<em>a-</em>SiC_x:H) were deposited by remote plasma chemical vapour deposition (RPECVD) techniques including electron cyclotron resonance plasma enhanced chemical vapour deposition (ECR-PECVD) and inductively-coupled-plasma chemical vapour deposition (ICP-CVD) on silicon (Si) wafers, soda-lime glass microscope slides, and glassy carbon (C) plates. Aluminium (Al) in the SiAlO films was incorporated by way of a metalorganic Al(TMHD)₃ precursor.</p> <p>Thickness, refractive index, and growth rate of the films were measured using variable angle spectroscopic ellipsometry (VASE). Film composition was measured using energy dispersive X-ray spectroscopy (EDX) for the SiAlO films and Rutherford backscattering spectrometry (RBS) for the SiC_x films. Elastic modulus and hardness of the SiAlO and SiC_x films were measured using nanoindentation and their adhesion was characterized via progressive load scratch testing.</p> <p>All films were observed to be optically transparent at near-IR and red wavelengths with many SiN_x and SiC_x films exhibiting significant optical absorption above 2.25eV. Modification of a previously developed deposition recipe produced doubled growth rates in SiN_x and SiC_xfilms. SiAlO films were produced with up to 1.6±0.1at% aluninium (Al) incorporation, while SiC_x films with composition ranging from SiC_0.25:H to SiC₂:H could be produced depending on the growth gas flow ratios. SiAlO films exhibited hardness and reduced modulus (<em>H</em> and <em>E</em>) up to 8.2±0.4 and 75±2GPa, respectively; <em>H </em>and <em>E</em> for the SiC_xfilmsreached 11.9±0.2 and 87±3 GPa. Initially, adhesion to Si wafers was extremely poor with films delaminating at loads of 1.5±0.3N when scratched with a 3/16” alumina (Al₂O₃) sphere; implementation of a rigorous pre-deposition surface cleaning procedure produced films showing only cracking and no delamination up to 30N loads vs. a 200μm radius Rockwell C diamond stylus.</p>