Measurement of Stress in III-V Semiconductors using the Degree of Polarization of Luminescence

Please use this identifier to cite or link to this item: http://hdl.handle.net/11375/6786

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DC Field	Value	Language
dc.contributor.advisor	Cassidy, D.T.	en_US
dc.contributor.author	Colbourne, Dwight Paul	en_US
dc.date.accessioned	2014-06-18T16:36:54Z	-
dc.date.available	2014-06-18T16:36:54Z	-
dc.date.created	2010-06-01	en_US
dc.date.issued	1992-10	en_US
dc.identifier.other	opendissertations/2092	en_US
dc.identifier.other	2807	en_US
dc.identifier.other	1338077	en_US
dc.identifier.uri	http://hdl.handle.net/11375/6786	-
dc.description.abstract	<p>The techniques of polarization-resolved electroluminescence and photoluminescence have been demonstrated to be accurate methods of measuring mechanical stress in luminescent semiconductors. These techniques have been applied to measure the stresses in AlGaAs/GaAs and InGaAsP/InP superluminescent diodes and diode lasers and bulk GaAs and InP crystals. Stresses due to various diode laser manufacturing processes have been measured. Individual dislocations in bulk crystals and strained epitaxial layers have been detected and characterized by their stress patterns.</p>	en_US
dc.subject	Engineering Physics	en_US
dc.subject	Engineering Physics	en_US
dc.title	Measurement of Stress in III-V Semiconductors using the Degree of Polarization of Luminescence	en_US
dc.type	thesis	en_US
dc.contributor.department	Engineering Physics	en_US
dc.description.degree	Doctor of Philosophy (PhD)	en_US
Appears in Collections:	Open Access Dissertations and Theses

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