Please use this identifier to cite or link to this item:
http://hdl.handle.net/11375/26905
Title: | Selective Area Growth Techniques Using Metal Organic Chemical Vapour Deposition for III-V Semiconductor Quantum Well Laser Devices |
Authors: | McShannon, David |
Advisor: | Kleiman, Rafael |
Department: | Engineering Physics |
Publication Date: | 2021 |
Abstract: | Selective area growth (SAG) is a technique used for semiconductor manufacturing to alter the epitaxial growth formation on the surface of a substrate. Surface feature modifications allow for local area semiconductor growth manipulation, increasing flux in the vicinity of non-growth mask edges. GaAs (100) wafers were processed with photolithographic direct laser pattern writing to create a series of silica rectangular prism masks on the surface of the substrate. The non-growth centers possess a very low sticking coefficient when placed within a metal-organic chemical vapour deposition (MOCVD) chamber with respect to the semiconductor materials deployed. In this work the establishment of a robust MOCVD process flow leading up to InGaAs compounds is defined at McMaster University’s Centre of Emerging Device Technologies. Quantum-well laser devices were fabricated in surface cavities to highlight the capabilities of SAG with MOCVD. A micro-photoluminescence device was manufactured with spatial resolution to test quantum-well emission spectra. The growth mechanics and photoluminescence of the quantum-well lasers were examined and characterized to improve the parametric control of the MOCVD process flow. |
URI: | http://hdl.handle.net/11375/26905 |
Appears in Collections: | Open Access Dissertations and Theses |
Files in This Item:
File | Description | Size | Format | |
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McShannon_David_A_2021September_MASc.pdf | 1.85 MB | Adobe PDF | View/Open |
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