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DC Field | Value | Language |
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dc.contributor.advisor | Kleiman, Rafael | - |
dc.contributor.author | McShannon, David | - |
dc.date.accessioned | 2021-09-27T14:33:26Z | - |
dc.date.available | 2021-09-27T14:33:26Z | - |
dc.date.issued | 2021 | - |
dc.identifier.uri | http://hdl.handle.net/11375/26905 | - |
dc.description.abstract | Selective area growth (SAG) is a technique used for semiconductor manufacturing to alter the epitaxial growth formation on the surface of a substrate. Surface feature modifications allow for local area semiconductor growth manipulation, increasing flux in the vicinity of non-growth mask edges. GaAs (100) wafers were processed with photolithographic direct laser pattern writing to create a series of silica rectangular prism masks on the surface of the substrate. The non-growth centers possess a very low sticking coefficient when placed within a metal-organic chemical vapour deposition (MOCVD) chamber with respect to the semiconductor materials deployed. In this work the establishment of a robust MOCVD process flow leading up to InGaAs compounds is defined at McMaster University’s Centre of Emerging Device Technologies. Quantum-well laser devices were fabricated in surface cavities to highlight the capabilities of SAG with MOCVD. A micro-photoluminescence device was manufactured with spatial resolution to test quantum-well emission spectra. The growth mechanics and photoluminescence of the quantum-well lasers were examined and characterized to improve the parametric control of the MOCVD process flow. | en_US |
dc.language.iso | en | en_US |
dc.title | Selective Area Growth Techniques Using Metal Organic Chemical Vapour Deposition for III-V Semiconductor Quantum Well Laser Devices | en_US |
dc.type | Thesis | en_US |
dc.contributor.department | Engineering Physics | en_US |
dc.description.degreetype | Thesis | en_US |
dc.description.degree | Master of Applied Science (MASc) | en_US |
Appears in Collections: | Open Access Dissertations and Theses |
Files in This Item:
File | Description | Size | Format | |
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McShannon_David_A_2021September_MASc.pdf | 1.85 MB | Adobe PDF | View/Open |
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