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Please use this identifier to cite or link to this item: http://hdl.handle.net/11375/26867
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dc.contributor.advisorBradley, Jonathan D. B.-
dc.contributor.authorFrankis, Henry C.-
dc.date.accessioned2021-09-09T14:03:50Z-
dc.date.available2021-09-09T14:03:50Z-
dc.date.issued2021-
dc.identifier.urihttp://hdl.handle.net/11375/26867-
dc.description.abstractSilicon (Si) and silicon nitride (Si3N4) have become the dominant photonic integrated circuit (PIC) material platforms, due to their low-cost, wafer-scale production of high-performance circuits. However, novel materials can offer additional functionalities that cannot be easily accessed in Si and Si3N4, such as light emission. Tellurium oxide (TeO2) is a novel material of interest because of its large linear and non-linear refractive indices, low material losses and large rare-earth dopant solubility, with applications including compact low-loss waveguides and on-chip light sources and amplifiers. This thesis investigates the post-processing integration of TeO2 devices onto standardized Si and Si3N4 chips to incorporate TeO2 material advantages into high-performance PICs. Chapter 1 introduces the state-of-the-art functionality for various integrated photonic materials as well as methods for integrating multiple materials onto single chips. Chapter 2 presents the development of a high-quality TeO2 thin film fabrication process by reactive RF sputtering, with material refractive indices of 2.07 and optical propagation losses of <0.1 dB/cm at 1550 nm. Chapter 3 investigates a conformally coated TeO2-Si3N4 waveguide platform capable of large TeO2 optical confinement and tight bending radii, characterizing fiber-chip edge couplers down to ~5 dB/facet, waveguide propagation losses of <0.5 dB/cm, directional couplers with 100% cross-over ratio, and microresonators with internal Q factors of 7.3 × 105. In Chapter 4 a spectroscopic study of TeO2:Er3+-coated Si3N4 waveguide amplifiers was undertaken, with internal net gains of up to 1.4 dB/cm in a 2.2-cm-long waveguide and 5 dB total in a 6.7-cm-long sample demonstrated, predicted to reach >10 dB could 150 mW of pump power be launched based on a developed rate-equation model. Chapter 5 demonstrates TeO2-coated microtrench resonators coupled to silicon waveguides, with internal Q factors of up to 2.1×105 and investigates environmental sensing metrics of devices. Chapter 6 summarizes the thesis and provides avenues for future work.en_US
dc.language.isoenen_US
dc.subjectPhotonicsen_US
dc.subjectSilicon photonicsen_US
dc.subjectOptical amplifieren_US
dc.subjectTellurium oxideen_US
dc.subjectIntegrated opticsen_US
dc.subjectErbiumen_US
dc.subjectResonatorsen_US
dc.titleLow-loss tellurium oxide devices integrated on silicon and silicon nitride photonic circuit platformsen_US
dc.typeThesisen_US
dc.contributor.departmentEngineering Physicsen_US
dc.description.degreetypeThesisen_US
dc.description.degreeDoctor of Philosophy (PhD)en_US
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