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Please use this identifier to cite or link to this item: http://hdl.handle.net/11375/24620
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DC FieldValueLanguage
dc.contributor.advisorCassidy, D. T.-
dc.contributor.authorAdams, Charles-
dc.date.accessioned2019-07-24T16:51:04Z-
dc.date.available2019-07-24T16:51:04Z-
dc.date.issued1988-08-
dc.identifier.urihttp://hdl.handle.net/11375/24620-
dc.description.abstractThe effects of tension and compression applied to unbonded InGaAsP semiconductor diode lasers have been studied. A theoretical calculation of the stress distribution within the laser and an analysis of the effect of strain on optical gain in semiconductors is presented. The observed dependence of threshold, wavelength, and polarization of the laser output on the applied stress is explained in terms of the strain dependence of the valence-band wavefunctions. The polarization behaviour is found to be related to thermal stress and the structure of the device. A technique has been developed to measure the thermal stress induced by current heating at the 105 dynes/cm2 level. The effect of stress on the below threshold behaviour of the lasers was investigated. The results are consistent with the strain dependence of the TE and TM mode gains.en_US
dc.language.isoenen_US
dc.subjectstress dependenten_US
dc.subjectInGaAspen_US
dc.subjectdiode laseren_US
dc.subjectsemiconductor diode laseren_US
dc.titleStress Dependent Behaviour of InGaAsP Semiconductor Diode Lasersen_US
dc.typeThesisen_US
dc.contributor.departmentEngineering Physicsen_US
dc.description.degreetypeThesisen_US
dc.description.degreeMaster of Engineering (ME)en_US
Appears in Collections:Digitized Open Access Dissertations and Theses

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