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Please use this identifier to cite or link to this item: http://hdl.handle.net/11375/21820
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DC FieldValueLanguage
dc.contributor.advisorLaPierre, R. R.-
dc.contributor.authorAhmed, Nuzhat N.-
dc.date.accessioned2017-08-04T20:29:27Z-
dc.date.available2017-08-04T20:29:27Z-
dc.date.issued2008-05-
dc.identifier.urihttp://hdl.handle.net/11375/21820-
dc.description.abstract<p> In the current research, use of p-n junction GaAs nanowires (NWs) grown by gas source molecular beam epitaxy on GaAs (111) B substrates for the fabrication of flexible solar cells are reported. The solar cells were fabricated by embedding the NWs in a polymer matrix (SU8 2), followed by ohmic contact formation to the tops of the NWs as well as the rear side of the substrate. I-V characteristic curves were obtained by illuminating the solar cells using a solar simulator, indicating a photovoltaic effect. NWs were also detached from the substrate by different methods and successfully transferred onto a flexible substrate for potential use as solar cells. Scanning electron microscopy was used throughout the research for characterization and optimization of the fabrication processes including NW embedment, removal from the substrate, and contact formation.</p>en_US
dc.language.isoen_USen_US
dc.subjectflexible, solar cells, fabrication, PN-junction, GaAs nanowires, epitaxyen_US
dc.titleTowards Fabrication of Flexible Solar Cells Using PN-Junction GaAs Nanowiresen_US
dc.typeThesisen_US
dc.contributor.departmentEngineering Physicsen_US
dc.description.degreetypeThesisen_US
dc.description.degreeMaster of Applied Science (MASc)en_US
Appears in Collections:Digitized Open Access Dissertations and Theses

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