Please use this identifier to cite or link to this item:
http://hdl.handle.net/11375/20015| Title: | Fundumental One-Dimensional Analysis of Photo-Diodes |
| Authors: | Remple, T.B. |
| Department: | Engineering |
| Publication Date: | Sep-1979 |
| Abstract: | <p>the program developed by A.M. Start, in his paper, Fundamental One-Dimentional Analysis of Transistors, Philips Research Report Supplements, #4, 1976, has been modified to handle high voltage, reversed biased p-i-n photo-diodes. The physical involved in the development of stark;s model is summarized and three different p-i-n diodes are analyzed. A Schottky barrier is also analyzed by assuming the metal contact is a very highly doped semiconductor material. A listing of the program is given in the appendices, as well as a description of the program and a user's guide. Te program is written in Fortran, was run on a CDC 6400 in double precision (giving 29 digits accuracy), requiring 45 k of memory and 300 to 1000 seconds run time.</p> |
| Description: | Title: Fundumental One-Dimensional Analysis of Photo-Diodes, Author: T.B. Remple, Location: Thode |
| URI: | http://hdl.handle.net/11375/20015 |
| Appears in Collections: | Open Access Dissertations and Theses |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| Remple_T_B_1979_09_master.pdf | Title: Fundumental One-Dimensional Analysis of Photo-Diodes, Author: T.B. Remple, Location: Thode | 19.24 MB | Adobe PDF | View/Open |
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