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DC Field | Value | Language |
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dc.contributor.author | Remple, T.B. | - |
dc.date.accessioned | 2016-08-02T22:11:21Z | - |
dc.date.available | 2016-08-02T22:11:21Z | - |
dc.date.issued | 1979-09 | - |
dc.identifier.uri | http://hdl.handle.net/11375/20015 | - |
dc.description | Title: Fundumental One-Dimensional Analysis of Photo-Diodes, Author: T.B. Remple, Location: Thode | en_US |
dc.description.abstract | <p>the program developed by A.M. Start, in his paper, Fundamental One-Dimentional Analysis of Transistors, Philips Research Report Supplements, #4, 1976, has been modified to handle high voltage, reversed biased p-i-n photo-diodes. The physical involved in the development of stark;s model is summarized and three different p-i-n diodes are analyzed. A Schottky barrier is also analyzed by assuming the metal contact is a very highly doped semiconductor material. A listing of the program is given in the appendices, as well as a description of the program and a user's guide. Te program is written in Fortran, was run on a CDC 6400 in double precision (giving 29 digits accuracy), requiring 45 k of memory and 300 to 1000 seconds run time.</p> | en_US |
dc.language.iso | en | en_US |
dc.title | Fundumental One-Dimensional Analysis of Photo-Diodes | en_US |
dc.type | Thesis | en_US |
dc.contributor.department | Engineering | en_US |
dc.description.degreetype | Thesis | en_US |
dc.description.degree | Master of Engineering (ME) | en_US |
Appears in Collections: | Open Access Dissertations and Theses |
Files in This Item:
File | Description | Size | Format | |
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Remple_T_B_1979_09_master.pdf | Title: Fundumental One-Dimensional Analysis of Photo-Diodes, Author: T.B. Remple, Location: Thode | 19.24 MB | Adobe PDF | View/Open |
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