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http://hdl.handle.net/11375/20002
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DC Field | Value | Language |
---|---|---|
dc.contributor.advisor | Gunn, M. W. | - |
dc.contributor.author | Rahman, Mohammad | - |
dc.date.accessioned | 2016-08-02T15:33:39Z | - |
dc.date.available | 2016-08-02T15:33:39Z | - |
dc.date.issued | 1967-04 | - |
dc.identifier.uri | http://hdl.handle.net/11375/20002 | - |
dc.description.abstract | <p> A method for the measurement of the microwave conductivity of a semiconductor subjected to a high electric field is described, which provides for varying angles between the microwave and applied electric field vectors. The results of measurements on 10 ohm-em. n-type germanium at 9.522 GHz with applied electric fields up to 3KV/cm are given. </p> <p> The measurements show that the microwave conductivity is controlled by the differential carrier mobility (∂V/∂E) for the condition of microwave and applied electric field vectors parallel. For the case of the fields at right angles the microwave conductivity is controlled by a carrier mobility intermediate between the d. c. mobility (v/B) and the differential mobility (∂V/∂E). </p> <p> Theoretical expressions for the performance of a proposed "Hot Electron Microwave Rotator" are developed. </p> | en_US |
dc.language.iso | en | en_US |
dc.subject | Microwave Propagation | en_US |
dc.subject | n-type Germanium | en_US |
dc.subject | Electric Field | en_US |
dc.subject | microwave conductivity | en_US |
dc.title | Microwave Propagation in n-type Germanium Subjected to a High Electric Field | en_US |
dc.contributor.department | Electrical Engineering | en_US |
dc.description.degreetype | Thesis | en_US |
dc.description.degree | Master of Engineering (MEngr) | en_US |
Appears in Collections: | Open Access Dissertations and Theses |
Files in This Item:
File | Description | Size | Format | |
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Rahman_Mohammad_H_U_1967Apr_Masters.pdf | 3.49 MB | Adobe PDF | View/Open |
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